Influence of MS interface transport on the current-voltage characteristic of MCT PV device

Authors
Hu, XN Li, YJ Fang, JX
Citation
Xn. Hu et al., Influence of MS interface transport on the current-voltage characteristic of MCT PV device, J INF M W, 20(3), 2001, pp. 165-168
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF INFRARED AND MILLIMETER WAVES
ISSN journal
10019014 → ACNP
Volume
20
Issue
3
Year of publication
2001
Pages
165 - 168
Database
ISI
SICI code
1001-9014(200106)20:3<165:IOMITO>2.0.ZU;2-0
Abstract
The influence of MS transport on the current-voltage characteristic of MCT PV device was investigated based on the current-voltage characteristics of MCT Schottkey barrier. The data of some devices were also discussed.