Indium doping on MBE grown HgCdTe

Authors
Wu, Y Wang, SL Chen, L Yu, MF Qiao, YM He, L
Citation
Y. Wu et al., Indium doping on MBE grown HgCdTe, J INF M W, 20(3), 2001, pp. 174-178
Citations number
20
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF INFRARED AND MILLIMETER WAVES
ISSN journal
10019014 → ACNP
Volume
20
Issue
3
Year of publication
2001
Pages
174 - 178
Database
ISI
SICI code
1001-9014(200106)20:3<174:IDOMGH>2.0.ZU;2-E
Abstract
The results of indium doping on MBE grown HgCdTe were described. It was fou nd that the indium electrical activation was close to 100% in HgCdTe and th e donor activation energy was at least smaller than 0.6 meV. It was confirm ed that a donor concentration of similar to3 X 10(15)cm(-3) was necessarily preserved for infrared FPAs applications. The diffusion behavior of indium was studied by thermal annealing, and a diffusion coefficient of similar t o 10(-14) cm(2)/sec at 400C was obtained, which confirms the feasibility an d validity of indium as an n-type dopant.