Photoluminescence characterization of GaTe single crystals

Radiative recombination mechanisms in GaTe single crystals have been invest igated as a function of temperature and excitation laser intensity in the e nergy region of 1.5-1.8 eV. Three emission bands have been observed located at 1.781 (A band), 1.735 (B band) and 1.575 eV (C band) at 10 K. A and B b ands have been found to be strongly dependent on temperature while C band h as been weakly dependent. The radiative recombination mechanisms of the A, B and C bands have been associated with the direct free exciton, bound-exci ton and donor-acceptor pair (DAP) transitions from the temperature and exci tation intensity dependencies of the PL intensities and peak energies of th e emission bands. (C) 2001 Elsevier Science B.V. All rights reserved.