UV photo-excited luminescence from Cu-doped sol-gel silica coatings has bee
n investigated. The intense emission in the visible part of the spectrum is
assigned to electronic transitions 3d(9)4s(1) --> 3d(10) in Cu+ ions. Phot
oluminescence time decay corresponding to this emission has been measured i
n the temperature range of 80-300 K. The curves resulted biexponential func
tions with two temperature-dependent time constants. The results have been
analysed in terms of a three level model including the effect of non-radiat
ive transitions, A comparison between these results and those obtained from
Cu+ ions embedded in crystalline matrices shows differences in the value o
f the parameters governing the luminescent process. These differences are i
nterpreted in terms of the local environment of Cu+ in the glassy network,
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