Improved analysis of low frequency noise in dynamic threshold MOS/SOI transistors

In this paper, low-frequency noise (LFN) in N- and P-channel dynamic-thresh old (DT) MOSFETs on Unibond substrate (SOI) is thoroughly investigated and, especially, an improved formulation of classical McWhorter's noise model i s proposed. In order to confirm our approach, an experimental comparison be tween body tied and DTMOS on SOI substrate has been achieved in terms of LF N behaviour. Furthermore, two different types of DTMOS transistors have bee n used: with and without current limiter. The LFN in DTMOS is analysed in o hmic and saturation regimes and the impact of the use of a current limiter (clamping transistor) is thoroughly analysed. An explanation based on float ing body effect inducing excess noise is also proposed. (C) 2001 Elsevier S cience Ltd. All rights reserved.