Indium incorporation and surface segregation during InGaN growth by molecular beam epitaxy: experiment and theory

Authors
Chen, HJ Feenstra, RM Northrup, J Neugebauer, J Greve, DW
Citation
Hj. Chen et al., Indium incorporation and surface segregation during InGaN growth by molecular beam epitaxy: experiment and theory, MRS I J N S, 6(11), 2001, pp. NIL_1-NIL_12
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH
ISSN journal
10925783 → ACNP
Volume
6
Issue
11
Year of publication
2001
Pages
NIL_1 - NIL_12
Database
ISI
SICI code
1092-5783(2001)6:11<NIL_1:IIASSD>2.0.ZU;2-9
Abstract
(Sic) polarities are grown by plasma-assisted molecular beam epitaxy. Scann ing tunneling microscopy images, interpreted using first-principles theoret ical calculations, show that there (sic) polarities. Evidence for the exist ence and stability of a structure containing two adlayers of indium on the In-rich InGaN(0001) surface is presented. The dependence on growth temperat ure and group III/V ratio of indium incorporation in InGaN is reported, and a model based on indium surface segregation is proposed to explain the obs ervations.