With the aim of providing a more detailed understanding of the reaction mec
hanism in the combustion chemical vapor deposition (CVD) of diamond, two fl
ame CVD systems were investigated. In an acetylene-oxygen flame at ambient
pressure, the influences of important deposition parameters including stoic
hiometry, substrate temperature and pretreatment as well as the effect of g
as phase additives were studied systematically, and conditions for controll
ed diamond growth were defined. From a large number of deposition experimen
ts, film and growth properties such as growth rate, morphology, stress and
purity were thus linked to the global gas phase composition. In a low-press
ure CVD flame, gas phase constituents including important intermediates wer
e analyzed in situ under selected deposition conditions to provide further
insight into the reaction mechanism. For this, a combination of molecular b
eam sampling mass spectrometry (MBMS) and laser spectroscopy was employed.
The species profiles obtained from these experiments were compared with sim
ulation results of the flame chemistry.