Developments for radiation hard silicon detectors by defect engineering - results by the CERN RD48 (ROSE) Collaboration

This report summarises the final results obtained by the RD48 collaboration . The emphasis is on the more practical aspects directly relevant for LHC a pplications. The report is based on the comprehensive survey given in the 1 999 status report (RD48 3rd Status Report, CERN/LHCC 2000-009, December 199 9), a recent conference report (Lindstrom et al, (RD48), and some latest ex perimental results. Additional data have been reported in the last ROSE wor kshop (5th ROSE workshop, CERN, CERN/LEB 2000-005), A compilation of all RD 48 internal reports and a full publication list can be found on the RD48 ho mepage (http://cern.ch/RD48/). The success of the oxygen enrichment of FZ-s ilicon as a highly powerful defect engineering technique and its optimisati on with various commercial manufacturers are reported. The focus is on the changes of the effective doping concentration (depletion voltage). The RD48 model for the dependence of radiation effects on fluence, temperature and operational time is verified: projections to operational scenarios for main LHC experiments demonstrate vital benefits. Progress in the microscopic un derstanding of damage effects as well as the application of defect kinetics models and device modelling for the prediction of the macroscopic behaviou r was also been achieved but will not be covered in detail. (C) 2001 Elsevi er Science B.V. All rights reserved.