Charge compensation in irradiated semiconductor devices using high-resistivity field plates

Authors
Parker, S Kenney, C
Citation
S. Parker et C. Kenney, Charge compensation in irradiated semiconductor devices using high-resistivity field plates, NUCL INST A, 465(1), 2001, pp. 101-107
Citations number
25
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
ISSN journal
01689002 → ACNP
Volume
465
Issue
1
Year of publication
2001
Pages
101 - 107
Database
ISI
SICI code
0168-9002(20010601)465:1<101:CCIISD>2.0.ZU;2-G
Abstract
A field-plate structure using a high-resistivity material is described. As with other field plates, it can be used to compensate trapped charges in se miconductor devices, including radiation detectors, but because little curr ent flows through it during the time a pulse is present on the signal elect rodes, it does not significantly increase the effective capacitance between signal electrodes or other structures near the plates. (C) 2001 Elsevier S cience B.V. All rights reserved.