Particle tracking using CMOS monolithic active pixel sensor

A novel monolithic active pixel sensor for charged particle tracking has be en designed and fabricated in a standard CMOS technology. The device archit ecture is identical to a CMOS camera. recently being proposed as an alterna tive to CCD sensors for visible light imaging. The partially depleted thin epitaxial silicon layer is used as a sensitive detector volume. The sensor is a photodiode having a special structure, which allows the high detection efficiency required for tracking applications A first prototype was made o f four arrays each containing 64 x 64 pixels, with a readout pitch of 20 mu m in both directions. An architecture allowing serial readout of the analog ue information from each pixel has been implemented. To evaluate the tracki ng performance of such a device, series of tests have been performed using a high-energy particle beam. A detailed analysis of the beam test data pres ented in this work demonstrate close to 100% minimum ionising particle dete ction efficiency and a good enough signal-to-noise ratio of more than 30. ( C) 2001 Elsevier Science B,V, All rights reserved.