Photoluminescence from high-energy heavy ion irradiated C-doped SiO2 thin films

SiO2 thin films were implanted at room temperature (RT) with 120 keV carbon ions to a dose of 1.0 x 10(17) ions/cm(2) and then irradiated at RT with h igh-energy Kr-84 or Ar-40 ions to a fluence of 1.0 x 10(12) ions/cm(2). Usi ng 320 nm monochromatic ultra-violet light for excitation, photoluminescenc e (PL) properties of these samples were examined and intense blue PL bands were observed. It was found that the blue PL peak intensity changes with el ectronic energy loss of the irradiation ion in the sample. With increasing the electronic energy loss level, the PL peak intensity decreases and the p eak position shifts towards to the short-wavelength direction. Furthermore, the existence of C-dopants enhances the luminescence property of the irrad iated samples. (C) 2001 Elsevier Science B.V. All rights reserved.