Point defect diffusion and clustering in ion implanted c-Si

This paper reviews some fundamental aspects of point defect migration and a gglomeration in crystalline Si. Both in-situ and ex-situ measurements were used to reach this target. Room temperature (RT) diffusivities of 1.5 x 10( -15) and 3.0 x 10(-13) cm(2)/s for I and V, respectively, were obtained usi ng in-situ leakage current measurements, performed during and just after io n implantation. To follow the defect evolution and clustering upon annealin g, ex-situ optical and electrical measurements were used. Low temperature ( 300-500 degreesC) annealing causes the formation of point-like defects, whi le higher temperatures (500-800 degreesC) are necessary to have defect clus tering, Finally, a well-defined dose (1 x 10(13) Si/cm(2) in pure Si) tempe rature (650 degreesC) and time thresholds exist for the transition from I-c lusters to extended {3 1 1} defects. When the transition takes place, both the optical and electrical defect properties undergo a dramatic change, sug gesting an abrupt structural transition in the evolution from I-cluster to {3 1 1} defects. Kinetic lattice Monte-Carlo simulations used to model the defect agglomeration and growth confirm these results. (C) 2001 Elsevier Sc ience B.V. All rights reserved.