Dynamics of pattern formation during low-energy ion bombardment of Si(001)

Citation
E. Chason et al., Dynamics of pattern formation during low-energy ion bombardment of Si(001), NUCL INST B, 178, 2001, pp. 55-61
Citations number
30
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
ISSN journal
0168583X → ACNP
Volume
178
Year of publication
2001
Pages
55 - 61
Database
ISI
SICI code
0168-583X(200105)178:<55:DOPFDL>2.0.ZU;2-L
Abstract
Sputtering of surfaces by collimated, low-energy ion beams results in spont aneous pattern formation in many systems. In order to explore the mechanism s that control the pattern formation, we have used in situ light scattering to measure the evolution of sputtered Si(0 0 1) surfaces. The results are interpreted within a linear instability model originally proposed by R.M. B radley and J.M.E. Harper [J. Vac. Sci. Technol. A 6 (1988) 2390] that inclu des the dependence of the sputter yield on the local surface morphology. (C ) 2001 Elsevier Science B.V. All rights reserved.