Formation of 2-D arrays of semiconductor nanocrystals or semiconductor-rich nanolayers by very low-energy Si or Ge ion implantation in silicon oxide films

The structure evolution of annealed low-energy Si- or Ge-implanted thin and thick SiO2 layers is studied. The majority of Si (or Ge) species is restri cted within a 3-4 nm thick layer. Si is able to separate and crystallize mo re easily than Ge. The glass transition temperature of the as-implanted str ucture has a significant effect on the progress of phase transformations ac companying annealing. (C) 2001 Elsevier Science B.V. All rights reserved.