Trapping of aluminium by dislocation loops in Si

It has been shown that high-dose aluminium implantation leads to the format ion of extended defects. The strong interaction between these defects and t he dopant significantly affects the final profile. However, the detailed me chanisms governing the trapping on the defects are still unclear. The aim o f this paper is to clarify the interaction of Al with extended defects. For this purpose, a well-defined band defect, created by a Ge amorphisation, w as used independently of the aluminium implantation. The aluminium implanta tion conditions were chosen in order to obtain a buried Al marker layer loc ated several micrometers beneath the surface, i.e. far away from the EOR ba nd. The results of this investigation, reported in this contribution, evide nce a clear accumulation of the dopant on the dislocation loops, indicating a direct trapping mechanism of the dopant. (C) 2001 Elsevier Science B.V. All rights reserved.