Modeling of hydrogen passivation process of silicon for solar cells applications

In this paper. results of investigation of evolution equations' system desc ribing hydrogen passivation of silicon are presented. Using Lie group theor y the classification of invariant solutions and initial system reduction to systems of ordinary differential equations (ODEs) is carried out for admis sible infinitesimal operators under constant hydrogen atoms diffusivity in the sample. Possibility of analytical solution of passivation problem is sh own. Analysis of system behavior taking into account diffusion and dissocia tion mechanisms is performed. It is ascertained that free hydrogen atoms di ffusion in the sample and 'defect-hydrogen' dissociation spoil passivation. Analytical dependences obtained make it possible to predict spatial and ti me defect distribution under hydrogen passivation of silicon depending on e xperimental conditions, (C) 2001 Published by Elsevier Science B.V.