This paper presents results on the direct synthesis of the beta -FeSi2 phas
e by ion beam mixing of Fe/Si bilayers with Xe ions. The influence of the s
ubstrate temperature, ion fluence and energy on the growth of this phase wa
s investigated using Rutherford backscattering (RBS), X-ray diffraction (XR
D) and conversion electron Mossbauer spectroscopy (CEMS). Complete growth o
f single-phase beta -FeSi2 was achieved by 205 keV Xe ion irradiation to a
fluence of 2 x 10(16) ions/cm(2) at 600 degreesC. We propose a two-step rea
ction mechanism involving thermal and ion beam energy deposition. (C) 2001
Elsevier Science B.V. All rights reserved.