He++-irradiated beryllium-doped Al0.5Ga0.5As MBE layers

Authors
Szatkowski, J Placzek-Popko, E Sieranski, K Johansen, A Fialkowski, J
Citation
J. Szatkowski et al., He++-irradiated beryllium-doped Al0.5Ga0.5As MBE layers, NUCL INST B, 178, 2001, pp. 252-255
Citations number
6
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
ISSN journal
0168583X → ACNP
Volume
178
Year of publication
2001
Pages
252 - 255
Database
ISI
SICI code
0168-583X(200105)178:<252:HBAML>2.0.ZU;2-2
Abstract
In the present paper the deep-level transient spectroscopy (DLTS) method wa s applied to investigate defects in Be-doped Al0.5Ga0.5As created during He ++-ion bombardment. The samples were irradiated at room temperature with tw o fluences of 0.3 MeV He++ ions: 10(11) cm(-2) and 10(12) cm(-2). The studi ed samples had a net acceptor concentration equal to 10(16) cm(-3). It was found that irradiation increases the concentration of three traps and produ ces at least two new traps. It was possible to determine the activation ene rgy for one of them as being equal to 0.54 eV. (C) 2001 Elsevier Science B. V. All rights reserved.