Citation
Cc. Lee et al., Activation analysis of rapid thermally annealed Si and Mg co-implanted semi-insulating GaAs, NUCL INST B, 178, 2001, pp. 265-268
Citations number
6
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
ISSN journal
0168583X
→ ACNP
Volume
178
Year of publication
2001
Pages
265 - 268
Database
ISI
SICI code
0168-583X(200105)178:<265:AAORTA>2.0.ZU;2-F
Abstract
A buried p-layer in a GaAs MESFET channel is successfully formed by (Si, ME
) co-implantation and rapid thermal annealing process. The effects of co-im
plantation dose on the measured electrical activity are investigated: and t
he results on MESFET implantation profiles are also discussed, when Si and
ME are co-implanted in the semi-insulating (SI) GaAs substrates. These modi
fied profiles are calculated by considering electrical activation and diffu
sion of both Si and Mg in the SI GaAs. The results are compared with an n-l
ayer measured by the C-V and I-V techniques. (C) 2001 Elsevier Science B.V.
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