Theoretical and experimental investigations of defect evolution in siliconcarbide during N+ and Al+ ion implantation taking into account internal stress fields

A theoretical model is developed which allows to describe the defect evolut ion in silicon carbide implanted with high doses of nitrogen and aluminium ions and subsequently annealed to form a solid solution. The diffusion of d efects, the formation of complexes of defect clusters and the influence of the internal elastic stress fields produced by the implanted ions and the c omplexes formed are taken into account. Results from the simulations have b een correlated with data obtained by Rutherford backscattering spectrometry /ion channelling (RBS/C). (C) 2001 Elsevier Science B.V. All rights reserve d.