High Fe solubility in InP by high temperature ion implantation

High temperature (> 200 degreesC) Fe implantation in InP has been proved to be a suitable method to obtain high substitutional Fe concentrations ([Fe2 +] > 10(18) cm(-3)), without substantial defect generation and Fe precipita tion. Electrical (current-voltage), deep level (photo-induced current trans ient spectroscopy) and optical (photoluminescence) measurements have been u sed to assess the behaviour of the activated Fe fraction, which is compared with the total Fe concentration evaluated by secondary ion mass spectromet ry. Our results show no detrimental effects on the electrical (and optical) Fe related properties for Fe peak concentrations as high as 2 x 10(19) cm( -3), in spite of a large inactive Fe fraction. A strong correlation between Fe activation and background n-doping concentration has been put in eviden ce, (C) 2001 Elsevier Science B.V, All rights reserved.