Low energy ion implantation and high energy heavy ion irradiation in C-60 films

Citation
Kl. Narayanan et al., Low energy ion implantation and high energy heavy ion irradiation in C-60 films, NUCL INST B, 178, 2001, pp. 301-304
Citations number
6
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
ISSN journal
0168583X → ACNP
Volume
178
Year of publication
2001
Pages
301 - 304
Database
ISI
SICI code
0168-583X(200105)178:<301:LEIIAH>2.0.ZU;2-7
Abstract
C-60 films have been bombarded with low energy boron ions and high energy s wift heavy ions (SHI) of silver and oxygen at different doses. Raman scatte ring and Fourier transform infrared (FTIR) studies were carried out on the virgin and irradiated films and the results are in good agreement with each other. The films subject to low energy boron ion implantation showed destr uction of the bukky balls whereas the films subject to high energy ion irra diation did not show appreciable effects on their structure. These results indicate that C-60 films are more prone to defects by elastic collision and subsequent implantation at lower energy. Irradiation at higher energy was less effective in creating appreciable defects through electronic excitatio n by inelastic collisions at similar energy density. (C) 2001 Elsevier Scie nce B.V. All rights reserved.