Indium-tin-oxide thin film deposited by a dual ion beam assisted e-beam evaporation system

Indium-tin-oxide (ITO) thin films were deposited on polycarbonate (PC) subs trates at low temperatures (< 90 degreesC) by a dual ion beam assisted e-be am evaporation system, where one gun (gun 1) is facing ITO flux and the oth er gun (gun 2) is facing the substrate. In this experiment, effects of rf p ower and oxygen flow rate of ion gun 2 on the electrical and optical proper ties of depositing ITO thin films were investigated. At optimal deposition conditions, ITO thin films deposited on the PC substrates larger than 20 cm x 20 cm showed the sheet resistance of less than 40 Omega /sq., the optica l transmittance of above 90%. and the uniformity of about 5%. (C) 2001 Else vier Science B.V. All rights reserved.