K. Lawniczakjablonska et al., RESONANT INELASTIC-SCATTERING IN DILUTE MAGNETIC SEMICONDUCTORS BY SOFT-X-RAY FLUORESCENCE SPECTROSCOPY, Applied physics A: Materials science & processing, 65(2), 1997, pp. 173-177
Soft X-ray fluorescence (SXF) provides a means of measuring the elemen
t and angular momentum selective valence band density of states in com
plex materials. Recent studies have demonstrated that SXF excited near
the absorption threshold generates an array of spectral features that
depend on the nature of the material, particularly on the localizatio
n of excited states in s- and d-band solids. The current interest in d
ilute magnetic semiconductors (DMS) remains highly motivated by recent
prospective applications, especially in optoelectronics. The Mn and S
- L resonant X-ray emission spectra of Zn1-xMnxS (where 0.05 less tha
n or equal to x less than or equal to 1) were measured as the energy o
f the exciting radiation was tuned across the S and Mn -L-2,L-3 absorp
tion edges of these compounds. Strong resonance peaks in Mn-L emission
spectra and the systematic appearance of new spectral features in S-L
emission spectra were observed. Partial substitution of Zn by a magne
tic Mn ion results in strong hybridization of the Mn 3d orbitals with
the sp band of the host semiconductor. A detailed study of resonant in
elastic scattering in the vicinity of the S and Mn-L-2,L-3 absorption
edges of these DMS is presented.