RESONANT INELASTIC-SCATTERING IN DILUTE MAGNETIC SEMICONDUCTORS BY SOFT-X-RAY FLUORESCENCE SPECTROSCOPY

Citation
K. Lawniczakjablonska et al., RESONANT INELASTIC-SCATTERING IN DILUTE MAGNETIC SEMICONDUCTORS BY SOFT-X-RAY FLUORESCENCE SPECTROSCOPY, Applied physics A: Materials science & processing, 65(2), 1997, pp. 173-177
Citations number
17
Categorie Soggetti
Physics, Applied
ISSN journal
09478396
Volume
65
Issue
2
Year of publication
1997
Pages
173 - 177
Database
ISI
SICI code
0947-8396(1997)65:2<173:RIIDMS>2.0.ZU;2-8
Abstract
Soft X-ray fluorescence (SXF) provides a means of measuring the elemen t and angular momentum selective valence band density of states in com plex materials. Recent studies have demonstrated that SXF excited near the absorption threshold generates an array of spectral features that depend on the nature of the material, particularly on the localizatio n of excited states in s- and d-band solids. The current interest in d ilute magnetic semiconductors (DMS) remains highly motivated by recent prospective applications, especially in optoelectronics. The Mn and S - L resonant X-ray emission spectra of Zn1-xMnxS (where 0.05 less tha n or equal to x less than or equal to 1) were measured as the energy o f the exciting radiation was tuned across the S and Mn -L-2,L-3 absorp tion edges of these compounds. Strong resonance peaks in Mn-L emission spectra and the systematic appearance of new spectral features in S-L emission spectra were observed. Partial substitution of Zn by a magne tic Mn ion results in strong hybridization of the Mn 3d orbitals with the sp band of the host semiconductor. A detailed study of resonant in elastic scattering in the vicinity of the S and Mn-L-2,L-3 absorption edges of these DMS is presented.