High-power quantum well remote junction laser and its electrical noise characteristics

Authors
Hu, GJ Shi, JW Qi, LY Zhang, SM Qu, Y
Citation
Gj. Hu et al., High-power quantum well remote junction laser and its electrical noise characteristics, OPT LASER T, 33(4), 2001, pp. 231-235
Citations number
5
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Optics & Acoustics
Journal title
OPTICS AND LASER TECHNOLOGY
ISSN journal
00303992 → ACNP
Volume
33
Issue
4
Year of publication
2001
Pages
231 - 235
Database
ISI
SICI code
0030-3992(200106)33:4<231:HQWRJL>2.0.ZU;2-7
Abstract
We designed and fabricated new structure lasers, the high-power AlGaAs/GaAs remote junction (RJ) single quantum well (SQW) semiconductor lasers whose pn junction was separated from the active layer. The RJ lasers showed marke d reduction of threshold current during early aging period. This reduction was accompanied by a decrease of non-radiative recombination centers in the active layer. For the RJ SQW lasers, the relation between the low-frequenc y electrical noise and the lifetime of devices is different from the conven tional SQW lasers. (C) 2001 Elsevier Science Ltd. All rights reserved.