Laser effects in semiconductor heterostructures within an extended dressed-atom approach

We extend the dressed-atom approach to treat the interaction of a laser fie ld with a semiconductor system. The semiconductor is modeled via a simple t wo-band isotropic scheme and the interaction with the laser field is incorp orated through the renormalization of the semiconductor energy gap and vale nce and conduction effective masses. We calculate the effects originated by the laser dressing on the donor and exciton peak energies in quantum-well heterostructures and show that the laser dressing may be quite considerable and readily observable. (C) 2001 Elsevier Science B.V. All rights reserved .