Shallow-donor states in semiconductor heterostructures within the fractional-dimensional space approach

Citation
Le. Oliveira et al., Shallow-donor states in semiconductor heterostructures within the fractional-dimensional space approach, PHYSICA B, 302, 2001, pp. 72-76
Citations number
18
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA B
ISSN journal
09214526 → ACNP
Volume
302
Year of publication
2001
Pages
72 - 76
Database
ISI
SICI code
0921-4526(200108)302:<72:SSISHW>2.0.ZU;2-A
Abstract
Shallow-donor states in quantum-sized semiconductor heterostructures are st udied within the fractional-dimensional space approach. Calculations were p erformed for the binding energies of the ground state of donors in GaAs-(Ga ,Al)As quantum wells, cylindrical quantum-well wires, and spherical quantum dots. Functional-dimensional theoretical results are shown to be in good a greement with previous variational calculations. (C) 2001 Elsevier Science B.V. All rights reserved.