Binding energy and polarizability in GaAs-(Ga,Al)As quantum-well wires

By means of a variational scheme and in the effective-mass approximation we have calculated the binding energy of shallow-donor impurities in rectangu lar-transversal section GaAs-(Ga,Al)As quantum-well wires under an applied electric field. We have considered an infinite confinement model to describ e the barriers on the wire boundaries. Depending on the transversal sizes, we can reproduce the results for the infinite quantum wells. We present the results for donor binding energies and polarizabilities of the wires. Our results are in good agreement with previous theoretical findings. This work gives very important information about the binding energy and polarizabili ty that can be taken into account in experimental work related to absorptio n processes, and carrier dynamics. associated with impurities in these hete rostructures. (C) 2001 Elsevier Science B.V. All rights reserved.