Fabrication of the low-resistive p-type ZnO by codoping method

We have demonstrated the possibility of growing p-type ZnO films by a pulse d laser deposition technique combined with plasma gas source. The p-type Zn O film has been fabricated by passing N2O gas through an electron cyclotron resonance (ECR) or RF plasma source. N-O gas is effective to prevent "O" v acancy from occurring and introduce "N" as an acceptor, at the same time. W ith Ca and N codoping technique, we have observed a room temperature resist ivity of 0.5 Omega cm and a carrier concentration of 5 x 10(19)cm (3) in Zn O film on glass substrate. Two-step growth, with a thin ZnO template layer formed at high temperature, is quite effective to realize a well crystalliz ed growth at low temperature. The observed p-type ZnO films will open the d oor for practical applications in various oxide electronic devices. (C) 200 1 Elsevier Science B.V. All rights reserved.