The formation kinetics of small oxygen clusters in hydrogenated Si has been
studied by means of infrared absorption measurements. Hydrogen was introdu
ced into the crystals by in-diffusion from H-2 gas at 1200-1300 C. The samp
les were heated at temperatures in the range of 280-37 degreesC for differe
nt durations. At initial stages of he:lt-treatment, enormous generation rat
es of the oxygen dimer have been observed in hydrogenated samples. This ind
icates highly enhanced diffusion of the interstitial oxygen atoms. The maxi
mum achievable concentration of the dimers is found to be limited by their
dissociation rate even at temperatures of about 300 degrees, while in as-gr
own crystals the capture processes are known to be dominant in this tempera
ture region. An explanation of this phenomenon is presented. (C) 2001 Publi
shed by Elsevier Science B.V.