Influence of group II and III shallow accepters on the gain of p-Ge lasers

Citation
K. Auen et al., Influence of group II and III shallow accepters on the gain of p-Ge lasers, PHYSICA B, 302, 2001, pp. 334-341
Citations number
37
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA B
ISSN journal
09214526 → ACNP
Volume
302
Year of publication
2001
Pages
334 - 341
Database
ISI
SICI code
0921-4526(200108)302:<334:IOGIAI>2.0.ZU;2-E
Abstract
The influence of intracenter absorption on the gain and the emission spectr um of p-Cc lasers wits investigated. Self-absorption of p-Ge laser emission by group III acceptors in active media leads to a decrease of the gain as well as to a spectral shift in the amplification and emission spectra. Expe rimental spectra of p-Ge laser emission show evidence of transitions betwee n shallow impurity states, even in the presence of high applied electric an d magnetic fields. (C) 2001 Elsevier Science B.V. All rights reserved.