Grain boundaries in YBa2Cu3O7-delta films grown on bicrystalline Ni substrates

Citation
K. Thiele et al., Grain boundaries in YBa2Cu3O7-delta films grown on bicrystalline Ni substrates, PHYSICA C, 355(3-4), 2001, pp. 203-210
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA C
ISSN journal
09214534 → ACNP
Volume
355
Issue
3-4
Year of publication
2001
Pages
203 - 210
Database
ISI
SICI code
0921-4534(20010615)355:3-4<203:GBIYFG>2.0.ZU;2-S
Abstract
In order to investigate the alternating transport properties introduced by individual grain boundaries of rolling assisted biaxially textured substrat e based YBa2Cu3O7-delta (YBCO) coated conductors, the growth of well define d bicrystalline films on buffered metallic substrates is desirable. Bicryst alline YBCO films were successfully prepared on Ce0.9Gd0.1O1.95 (CGO) buffe red bicrystalline Ni foils. The Ni foils are grown epitaxially on a KCI bic rystal, The optimum conditions of epitaxial growth for each layer and the s uperconducting properties of the YBCO films were determined. A similar to 6 degrees [0 0 1] tilt grain boundary was investigated in more detail. We su cceeded to grow an epitaxial CGO single buffer layer with a full width at h alf maximum of only 3.50. The YBCO films grew perfectly epitaxially and sho wed good superconducting properties like a T-onset of 88 K, a j(c) of 1.4 x 10(7) A/cm(2) in the undisturbed sections of the film and 1 x 10(6) A/cm(2 ) across the grain boundary (5 K, 5 mT). (C) 2001 Elsevier Science B.V. All rights reserved.