Carrier relaxation and quantum decoherence of excited states in self-assembled quantum dots - art. no. 241303

Citation
H. Htoon et al., Carrier relaxation and quantum decoherence of excited states in self-assembled quantum dots - art. no. 241303, PHYS REV B, 6324(24), 2001, pp. 1303
Citations number
34
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
6324
Issue
24
Year of publication
2001
Database
ISI
SICI code
0163-1829(20010615)6324:24<1303:CRAQDO>2.0.ZU;2-U
Abstract
We report systematic measurements of photoluminescence excitation spectra a nd dephasing times (T-2's) on various excited states of hundreds of individ ual quantum dots (QDs). From the variation of T-2's with the energy separat ion between excited states and the ground state (E-rel), we identified two distinct regions of E-rel where LO phonon emission and hole relaxation via LA phonon emission play as dominat dephasing mechanisms. We also found a cl ear evidence of significantly slow energy relaxation in the E-rel range whe re these phonon emission processes are suppressed due to the reduction of i nteraction phase space.