A reordered valence band in GaN/AlxGa1-xN quantum wells with respect to GaN
epilayers has been found as a result of the observation of an enhanced g f
actor (g*similar to3) in magnetoluminescence spectra in fields up to 55 T.
This has been caused by a reversal of the states in the strained AlxGa1-xN
barriers thus giving different barker heights for the different quantum wel
l hole states. From k-p calculations in the quasicubic approximation, a cha
nge in the valence band ordering will account for the observed values for t
he g factors. We have also observed the well-width dependence of the in-pla
ne extent of the excitonic wave function from which we infer an increase in
the exciton binding energy with the reduction of the well width in general
agreement with theoretical calculations of Bigenwald et al. [Phys. Status
Sokidi B 216, 371 (1999)] that use a variational approach in the envelope f
unction formalism that includes the effect of the electric field in the wel
ls.