We discuss Fermi-edge singularity effects on the linear and nonlinear trans
ient response of an electron gas in a doped semiconductor. We use a bosoniz
ation scheme to describe the low-energy excitations, which allows us to com
pute the time and temperature dependence of the response functions. Coheren
t control of the energy absorption at resonance is analyzed in the linear r
egime. It is shown that a phase shift appears in the coherent control oscil
lations, which is not present in the excitonic case. The nonlinear response
is calculated analytically and used to predict that four wave-mixing exper
iments would present a Fermi-edge singularity when the exciting energy is v
aried. A new dephasing mechanism is predicted in doped samples that depends
linearly on temperature and is produced by the low-energy bosonic excitati
ons in the conduction band.