A. Hoffman et al., Temperature-induced ion kinetic energy relaxation and yield of H- dissociative electron attachment from hydrogenated diamond films - art. no. 245404, PHYS REV B, 6324(24), 2001, pp. 5404
In this paper, we report on the influence of surface temperature on low-ene
rgy H- electron stimulated desorption occurring via dissociative electron a
ttachment from hydrogenated diamond films. By measuring the H- kinetic ener
gy distribution (KED) induced by electron bombardment in the 7-18 eV range
for surface temperatures ranging between 100 and 450 K, we investigate the
dynamics of the desorption process. It is determined that the H- ion yield
continuously decreases with increasing temperature and that the most probab
le H- kinetic energy shifts to lower energies. It is proposed that the effe
ct of temperature on the H-, KED and consequently, on the reduction in ion
yield is predominantly due to an increase in the energy relaxation of the a
nion resonance and energy losses of the outgoing H- ion through interaction
s with the solid's multiphonon background and collisions.