Temperature-induced ion kinetic energy relaxation and yield of H- dissociative electron attachment from hydrogenated diamond films - art. no. 245404

Citation
A. Hoffman et al., Temperature-induced ion kinetic energy relaxation and yield of H- dissociative electron attachment from hydrogenated diamond films - art. no. 245404, PHYS REV B, 6324(24), 2001, pp. 5404
Citations number
22
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
6324
Issue
24
Year of publication
2001
Database
ISI
SICI code
0163-1829(20010615)6324:24<5404:TIKERA>2.0.ZU;2-6
Abstract
In this paper, we report on the influence of surface temperature on low-ene rgy H- electron stimulated desorption occurring via dissociative electron a ttachment from hydrogenated diamond films. By measuring the H- kinetic ener gy distribution (KED) induced by electron bombardment in the 7-18 eV range for surface temperatures ranging between 100 and 450 K, we investigate the dynamics of the desorption process. It is determined that the H- ion yield continuously decreases with increasing temperature and that the most probab le H- kinetic energy shifts to lower energies. It is proposed that the effe ct of temperature on the H-, KED and consequently, on the reduction in ion yield is predominantly due to an increase in the energy relaxation of the a nion resonance and energy losses of the outgoing H- ion through interaction s with the solid's multiphonon background and collisions.