Polarization of the interband optical dipole in InAs/GaAs self-organized quantum dots - art. no. 233306

Authors
Cortez, S Krebs, O Voisin, P Gerard, JM
Citation
S. Cortez et al., Polarization of the interband optical dipole in InAs/GaAs self-organized quantum dots - art. no. 233306, PHYS REV B, 6323(23), 2001, pp. 3306
Citations number
22
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
6323
Issue
23
Year of publication
2001
Database
ISI
SICI code
0163-1829(20010615)6323:23<3306:POTIOD>2.0.ZU;2-B
Abstract
We present measurements of the optical dipole of interband transitions in I nAs/GaAs quantum dots. Both the transmission in guided-wave geometry and th e in-plane polarization dependence of the photoluminescence are analyzed. T he relative oscillator strength and polarization of up to four optical tran sitions have been determined, and the electronic structure is discussed, wi th a focus on the heavy-hole versus light-hole character of valence states.