Charge-density-wave mechanism in the 2H-NbSe2 family: Angle-resolved photoemission studies - art. no. 235101

Citation
Wc. Tonjes et al., Charge-density-wave mechanism in the 2H-NbSe2 family: Angle-resolved photoemission studies - art. no. 235101, PHYS REV B, 6323(23), 2001, pp. 5101
Citations number
23
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
6323
Issue
23
Year of publication
2001
Database
ISI
SICI code
0163-1829(20010615)6323:23<5101:CMIT2F>2.0.ZU;2-P
Abstract
We report high-resolution angle resolved photoemission studies of 2H-NbSe2 and 2H-TaS2. Results are compared to those of 2H-TaSe2. We find that the no rmal stare electronic structures in this family of materials have the same basic characteristics. Their Fermi surface consists of a pocket around Gamm a and another one around K. They ail exhibit a saddle band near EF along T- K. A finite energy gap is observed in the saddle band region and on the Fer mi surface around K in 2H-TaS2 and 2H-TaSe2. Gapping on the Fermi surface a round Gamma was not observed. We suggest that the charge density waves in t his family of materials originate from a combination of the partial nesting of the Fermi surface around K and the saddle band.