Electronic states and optical properties of GaAs/AlAs and GaAs/vacuum superlattices by the linear combination of bulk bands method - art. no. 235313

The linear combination of bulk bands method recently introduced by Wang, Fr anceschetti, and Zunger [Phys. Rev. Lett. 78, 2819 (1997)] is applied to a calculation of energy bands and optical constants of (GaAs)(n)/(AlAs)(n) an d (GaAs)(n)/(vacuum)(n) (001) superlattices with n ranging from 4 to 20. Em pirical pseudopotentials are used for the calculation of the bulk energy ba nds. Quantum-confinement induced shifts of critical point energies are calc ulated and are found to be larger for the GaAs/vacuum system. The E-1 peak in the absorption spectra has a blueshift and splits into two peaks for dec reasing superlattice period; the E-2 transition instead is found to be spli t for large-period GaAs/AlAs superlattices. The band contribution to linear birefringence of GaAs/AlAs superlattices is calculated and compared with r ecent experimental results of Sirenko et al. [Phys. Rev. B 60, 8253 (1999)] . The frequency-dependent part reproduces the observed increase with decrea sing superlattice period, while the calculated zero-frequency birefringence does not account for the experimental results and points to the importance of local-field effects.