Reply to "Comment on 'Molecular dynamics simulations of solid-phase epitaxy of Si: Growth mechanisms'" - art. no. 237402

Authors
Motooka, T Nishihara, K Munetoh, S Moriguchi, K Shintani, A
Citation
T. Motooka et al., Reply to "Comment on 'Molecular dynamics simulations of solid-phase epitaxy of Si: Growth mechanisms'" - art. no. 237402, PHYS REV B, 6323(23), 2001, pp. 7402-NIL_541
Citations number
2
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
6323
Issue
23
Year of publication
2001
Pages
7402 - NIL_541
Database
ISI
SICI code
0163-1829(20010615)6323:23<7402:RT"O'D>2.0.ZU;2-K
Abstract
We have investigated atomic diffusion properties near the amorphous/crystal line (a/c) Si(001) interface during solid-phase epitaxy (SPE) of Si based o n molecular-dynamics simulations using the Tersoff potential. It has been f ound that the mean-square displacement of the Si atoms in an amorphous laye r with a thickness of 10 Angstrom at the ale interface is larger than that in bulk amorphous Si. This can be attributed to local heating due to crysta llization of amorphous Si during SPE growth.