Properties of GaAs MOSFET with gate dielectric grown by liquid-phase selective oxidation method

The effects of operating temperature and thickness of gate dielectric on th e electrical characteristics of a GaAs MOSFET have been investigated. We fa bricated the GaAs MOSFET using Ga2O3(As2O3) as the gate dielectric prepared by a liquid-phase chemically enhanced oxidation method. By reducing the te mperature from 150 degreesC to -50 degreesC, the transconductance call be e nhanced about 100% for a 1 mum gate-length MOSFET with oxide thickness of 3 5 nm. An increasing trend of transconductance can also be observed by reduc ing the gate-oxide thickness. In addition, the short-circuit current gain c utoff frequency f(T) and the maximum oscillation frequency f(max) as a func tion of temperature and gate-oxide thickness are discussed for different va lues of gate length. (C) 2001 Elsevier Science Ltd. All rights reserved.