Silicon controlled recitfiers type electrostatic discharge protection circuits with variable holding voltage

Authors
Jang, SL Li, SH Lin, LS
Citation
Sl. Jang et al., Silicon controlled recitfiers type electrostatic discharge protection circuits with variable holding voltage, SOL ST ELEC, 45(5), 2001, pp. 689-696
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
SOLID-STATE ELECTRONICS
ISSN journal
00381101 → ACNP
Volume
45
Issue
5
Year of publication
2001
Pages
689 - 696
Database
ISI
SICI code
0038-1101(200105)45:5<689:SCRTED>2.0.ZU;2-H
Abstract
A new design of silicon controlled recitfiers (SCR)-type electrostatic-disc harge (ESD) protection circuit has been presented. In the design we vary th e number of stacked diodes in series with the npn transistor in the SCR to control the holding voltage. Experimental and analysis of the transient and steady-stats I-V characteristics of SCR-type ESD protection circuits with variable holding voltage have been carried out. It has been experimentally verified that the holding voltage of SCR can be increased by increasing the number of stacked diodes and it call be designed to avoid accidential latc hup caused by system overshooting. (C) 2001 Elsevier Science Ltd. All right s reserved.