Band gap narrowing in strained Si1-xGex base on (001) Si substrate

Authors
Jin, HY Zhang, LC
Citation
Hy. Jin et Lc. Zhang, Band gap narrowing in strained Si1-xGex base on (001) Si substrate, SOL ST ELEC, 45(5), 2001, pp. 697-702
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
SOLID-STATE ELECTRONICS
ISSN journal
00381101 → ACNP
Volume
45
Issue
5
Year of publication
2001
Pages
697 - 702
Database
ISI
SICI code
0038-1101(200105)45:5<697:BGNISS>2.0.ZU;2-#
Abstract
This paper presents a detailed empirical formula on the band gap narrowing of strained Si1-xGex base as a function of impurity concentration, temperat ure and Ge content x. This method has been shown to be very accurate, and h as been applied to strained Si1-xGex base on (0 0 1) Si substrates. We have calculated the band gap narrowing contribution of the germanium, high dopi ng effects and temperature based on the empirical relation. The values obta ined are very comparable with the theoretical and experimental results give n by the literature. (C) 2001 Elsevier Science Ltd. All rights reserved.