Analysis of reliability of AlGaAs/GaAs HBTs based on device simulation

Authors
Tan, Y Liou, JJ Gessner, J Schwierz, F
Citation
Y. Tan et al., Analysis of reliability of AlGaAs/GaAs HBTs based on device simulation, SOL ST ELEC, 45(5), 2001, pp. 727-734
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
SOLID-STATE ELECTRONICS
ISSN journal
00381101 → ACNP
Volume
45
Issue
5
Year of publication
2001
Pages
727 - 734
Database
ISI
SICI code
0038-1101(200105)45:5<727:AOROAH>2.0.ZU;2-P
Abstract
Reliability of GaAs-based heterojunction bipolar transistor (HBT) is studie d based on two-dimensional device simulation. The main objective is to iden tify the types and locations of defects in the HBT which are responsible fo r different base current instabilities observed experimentally in post-stre ss HBTs. Pre- and post-stress measurement data reported in the literature a re included to demonstrate the usefulness of the analysis. (C) 2001 Elsevie r Science Ltd. All rights reserved.