Reliability of GaAs-based heterojunction bipolar transistor (HBT) is studie
d based on two-dimensional device simulation. The main objective is to iden
tify the types and locations of defects in the HBT which are responsible fo
r different base current instabilities observed experimentally in post-stre
ss HBTs. Pre- and post-stress measurement data reported in the literature a
re included to demonstrate the usefulness of the analysis. (C) 2001 Elsevie
r Science Ltd. All rights reserved.