Characterization of MOSFETs fabricated on large-grain polysilicon on insulator

Large-grain polysilicon on insulator films, formed by utilizing metal induc ed unilateral crystallization (MIUC) of amorphous silicon film and subseque nt high temperature annealing, has been used to fabricate high performance MOSFETs. The corelation between the improvement of device characteristics a nd of grain size enhancement has been studied. It was found that the MOSFET characteristics have a strong dependence on both device width and length. Substantially better characteristics of devices fabricated on the enhanced films compared with other recrystallization methods are observed in large d evices. Significant improvement in device characteristics has been demonstr ated as the dimension is reduced. The statistical variation on device param eters has also been studied and the most significant device-to-device varia tion is found when the transistor size is around the size of the silicon gr ains. (C) 2001 Elsevier Science Ltd. All rights reserved.