Numerical analysis for the effects of SiO2/Si interface roughness on quantum oscillations in ultrathin MOSFETs

Authors
Mao, LF Tan, CH Xu, MZ
Citation
Lf. Mao et al., Numerical analysis for the effects of SiO2/Si interface roughness on quantum oscillations in ultrathin MOSFETs, SOL ST ELEC, 45(5), 2001, pp. 773-776
Citations number
19
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
SOLID-STATE ELECTRONICS
ISSN journal
00381101 → ACNP
Volume
45
Issue
5
Year of publication
2001
Pages
773 - 776
Database
ISI
SICI code
0038-1101(200105)45:5<773:NAFTEO>2.0.ZU;2-F
Abstract
Interface roughness effects on quantum oscillations in ultrathin metal-oxid e-semiconductor held transistors (MOSFETs) are investigated by numerical an alysis. The interface roughness is described in terms of Gauss distribution . Quantum oscillations in ultrathin gate oxides are shown to be little damp ed by SiO2/Si interface roughness. The applied voltage shift at the extreme of quantum oscillations increases linearly with SiQ(2)/Si interface roughn ess increasing. This means that this shift may be used to obtain the inform ation about the interface roughness as an inexpensive and simple tool. (C) 2001 Elsevier Science Ltd. All rights reserved.