Comparative study of the epitaxial growth of Cu on MgO(001) and on hydrogen terminated Si(001)

A comparative study combining diffraction and scanning probe techniques of the epitaxial growth of Cu on hydrogen terminated Si(0 0 1) and on MgO(0 0 1) is reported. In the case of Cu on Si(0 0 1) a three dimensional growth m ode with typical island dimensions of 10 nm is found. Growth of Cu on MgO(0 0 1) also yields a three dimensional growth. In order to achieve a flat Cu surface two different seed layer systems are investigated: Pt and Fe/Pt. I n the case of Pt the Cu layer grows in (1 1 1)-orientation. Using a Fe/Pt s eed Layer system a smooth Cu(0 0 1) film is obtained, which is further impr oved in flatness by a short annealing procedure. (C) 2001 Elsevier Science B.V. All rights reserved.