The P-H-T effects on the electric resistance and magnetoresistance of La0.7Sr0.1Pb0.2MnO3 single crystal films

Citation
Ss. Kucherenko et al., The P-H-T effects on the electric resistance and magnetoresistance of La0.7Sr0.1Pb0.2MnO3 single crystal films, TECH PHYS L, 27(6), 2001, pp. 451-453
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
TECHNICAL PHYSICS LETTERS
ISSN journal
10637850 → ACNP
Volume
27
Issue
6
Year of publication
2001
Pages
451 - 453
Database
ISI
SICI code
1063-7850(2001)27:6<451:TPEOTE>2.0.ZU;2-X
Abstract
The effects of high hydrostatic pressures (P) and magnetic fields (H) in a broad temperature range (T = 77-325 K) on the electric resistance (R) and m agnetoresistance (DeltaR/R-0) was studied in laser-deposited La0.7Sr0.1Pb0. 2MnO3 single crystal films on (100)-oriented SrTiO3 substrates. A maximum r esponse to the P and H variations was observed in the temperature interval of phase transitions (T = 310-325 K). A growth in the pressure P leads to a n increase in both R and DeltaR/R-0 values, while an increase in the magnet ic field strength H is accompanied by an increase in DeltaR/R-0 and a drop in the electric resistance R of the single crystal films studied. (C) 2001 MAIK "Nauka/Interperiodica".