Specific properties of the PZT-based thin-film capacitor structures with excess lead oxide

Citation
Vp. Afanas'Ev et al., Specific properties of the PZT-based thin-film capacitor structures with excess lead oxide, TECH PHYS L, 27(6), 2001, pp. 467-469
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
TECHNICAL PHYSICS LETTERS
ISSN journal
10637850 → ACNP
Volume
27
Issue
6
Year of publication
2001
Pages
467 - 469
Database
ISI
SICI code
1063-7850(2001)27:6<467:SPOTPT>2.0.ZU;2-X
Abstract
The effect of excess lead oxide on the microstructure and ferroelectric pro perties of lead zirconate titanate (PZT) films was studied in PZT-based thi n-film capacitor structures. It is shown that excess lead in the form of le ad oxide is localized at the grain boundaries and film-platinum electrode i nterfaces, which can result in the appearance of internal electric fields a nd the self-polarization of PZT films. It is suggested that the self-polari zation effect is related to the formation of a built-in electric charge wit h different densities at the bottom and top metal electrode-ferroelectric f ilm interfaces. (C) 2001 MAIK "Nauka/Interperiodica".