IR LASER-INDUCED DECOMPOSITION OF PROP-2-ENYLSILANE AND ETHYNYLSILANEFOR CHEMICAL-VAPOR-DEPOSITION OF SI C PHASES/

Authors
POLA J VITEK J BASTL Z URBANOVA M SUBRT J TAYLOR R
Citation
J. Pola et al., IR LASER-INDUCED DECOMPOSITION OF PROP-2-ENYLSILANE AND ETHYNYLSILANEFOR CHEMICAL-VAPOR-DEPOSITION OF SI C PHASES/, Journal of materials chemistry, 7(8), 1997, pp. 1415-1420
Citations number
39
Categorie Soggetti
Chemistry Physical","Material Science
Journal title
Journal of materials chemistry → ACNP
ISSN journal
09599428
Volume
7
Issue
8
Year of publication
1997
Pages
1415 - 1420
Database
ISI
SICI code
0959-9428(1997)7:8<1415:ILDOPA>2.0.ZU;2-P
Abstract
IR multiphoton decomposition of prop-2-enylsilane affords a solid mate rial consisting of an Si/C/H polymer and SIG, while that of ethenylsil ane produces a solid material consisting almost exclusively of SiC.